• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    PURPOSE: An exposure apparatus of a semiconductor device is provided to prevent power loss by using a spectrum substance as an aperture. CONSTITUTION: In an exposure apparatus using an aperture, at least one spectrum substance is used as the aperture. The spectrum substance is one selected from group consisting of a prism, a fresnel lens, and a hologram. The angel of the prism, the curvature of the fresnel lens and the diffraction input of the hologram are determined by a predetermined direction.
    公开号:KR20040031952A
    申请号:KR1020020061247
    申请日:2002-10-08
    公开日:2004-04-14
    发明作者:임동규
    申请人:주식회사 하이닉스반도체；
    IPC主号:
    专利说明:

    Apparatus for exposing of semiconductor device
    [15] BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus for a semiconductor element, and more particularly, to an exposure apparatus for a semiconductor element, in which spectroscopy to disperse light as an aperture is used in the incidence illumination to improve the productivity of the element.
    [16] Deformation lighting technology for forming a fine pattern (pattern) used in the manufacture of semiconductor devices has been developed as one of the technology to increase the resolution, such as a phase inversion mask technology.
    [17] In an exposure process having a general aperture, zero-order diffracted light contributes to pattern formation, thereby increasing only linear components on the spatial image of the pattern, resulting in a decrease in the spatial image MTF (Modulation Transfer Function) value.
    [18] In addition, when the size of the pattern is small, the first-order diffracted light does not pass through the projection lens (Lens) of the projection optical system provided in the exposure equipment, so that the pattern cannot be formed.
    [19] Modified illumination technology is generally designed to remove the linearly ordered zero-order diffracted light passing through the reticle through the aperture by adjusting the shape of the aperture through which exposure light enters.
    [20] FIG. 1 is a schematic diagram showing an exposure apparatus of a semiconductor device having a conventional incidence-deformation aperture, which is a laser beam 11 and determines the projection form of the laser beam 11 as an aperture. Zoom / Sigma lens array unit 15, on which the blade 13, the laser beam 11 passing through the blade 13 is projected, and the zoom / sigma lens array unit An integrator 17 for converting the laser beam 11 passing through 15 into a point light source, a condensing lens 19 for forming the point light source, and various patterns Designed reticle 21, the laser beam 11 passing through the reticle 21 forms a first diffracted light, the projection optical system 23, the first diffracted light is projected to the reticle 21 The designed patterns consist of a wafer 25 to be transferred.
    [21] Four holes of the blade 13 for transmitting light in the incidence-defining aperture are quadrapole blades, and two holes as shown in Fig. 2A are dipole blades, as shown in Fig. 2B. As shown, there is an annular blade that transmits light along the edge at the center of light blocking.
    [22] 2A and 2B, reference numeral '31' denotes a light transmitting region having a transmittance of 100%, and '32' denotes a light blocking region having a transmittance of 0%, respectively.
    [23] Common to all dipole blades, quadrupole blades, and annular blades is that they cover the central part of the cooking system so that light does not penetrate straight.
    [24] The zero-order diffracted light transmitted vertically in the reticle acts as a linear component when forming a mask spatial image.
    [25] In the case of incidence illumination, the zero-order diffracted light that passes through the mask and reaches the wafer acts as the light that transmits the mask image rather than as the linear component that forms the mask spatial image, thereby removing the linear component of the mask spatial image. As a result, the MTF increases the resolution and the depth of focus, but the amount of light transmitted is reduced as much as the light shielding area of the blade 13, that is, the power loss (Power loss) occurs, there is a problem that the throughput is reduced. .
    [26] An object of the present invention is to provide an exposure apparatus for a semiconductor device which increases the throughput by preventing the occurrence of power loss in incident lighting.
    [1] 1 is a schematic view showing an exposure apparatus of a semiconductor element having a conventional incidence strain opening.
    [2] Figure 2a is a plan view showing a conventional dipole blade.
    [3] Figure 2b is a plan view of a conventional annular blade.
    [4] 3 is a schematic diagram illustrating an exposure apparatus of a semiconductor device having an incidence-deformation aperture according to an embodiment of the present invention.
    [5] 4 is a plan view showing an aperture shape shown by rotating the spectroscope of the present invention by 90 degrees.
    [6] Figure 5a is a plan view showing the use of one spectroscopy to achieve one aperture shape in the present invention.
    [7] FIG. 5B is a plan view showing the use of a plurality of spectroscopy to form one aperture shape in the present invention. FIG.
    [8] <Description of Symbols for Main Parts of Drawings>
    [9] 11: laser beam 13: blade
    [10] 15: zoom / sigma lens array unit 17: integrator
    [11] 19: condensing lens 21: reticles
    [12] 23: projection optical system 25: wafer
    [13] 31: light transmitting area 32: light blocking area
    [14] 41 Spectroscope 43 Aperture Shape
    [27] The present invention for achieving the above object,
    [28] In the exposure apparatus of the semiconductor element using the injecting aperture aperture,
    [29] Providing an exposure apparatus of a semiconductor device, characterized in that one or more spectrometers selected from the group consisting of a prism, a Fresnel lens and a hologram are used as the aperture;
    [30] The angle of the prism and the curvature of the Fresnel lens and the diffraction input of the hologram are determined according to the desired direction in the incident illumination,
    [31] The spectroscope is characterized in that the aperture shape is made by using one or a plurality of small ones thereof.
    [32] The principle of the present invention is that in the incidence illumination, a spectroscope for dispersing light as an aperture is used, whereby the amount of light transmitted is larger than that of the prior art in which a blade is used as an aperture to cover a part of the light and proceed with an exposure process. It is to prevent the power loss generated from.
    [33] Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
    [34] 3 is a schematic diagram illustrating an exposure apparatus of a semiconductor device having an incidence-deformation aperture according to an exemplary embodiment of the present invention, which determines a projection shape of the laser beam 11 and the laser beam 11 as an aperture. An aperture shape 43 in which the laser beam 11 passes through the optical body 41, the spectroscope 41, a zoom / sigma lens array unit 15 in which the aperture shape 43 is projected, An integrator 17 for converting the laser beam 11 passing through the zoom / sigma lens array unit 15 into a point light source, a condensing lens 19 for forming the point light source, and various patterns The designed reticle 21, the projection optical system 23 through which the laser beam 11 passing through the reticle 21 forms the first diffracted light, and the first diffracted light is projected, and the pattern designed in the reticle 21. Is composed of a wafer 25 to be transferred.
    [35] Here, the spectroscope 41 may include one or two or more selected from the group consisting of a prism, a fresnel lens, and a hologram. Like the aperture shape 43 shown by rotation, the spectroscope 41 is rotated to disperse the laser beam 11 in the desired direction according to the incidence illumination.
    [36] At this time, the angle of the prism, the curvature of the Fresnel lens, and the diffraction input of the hologram are determined according to the desired direction in the incident illumination. In order to achieve the aperture shape 43, one spectrometer 41 may be used as shown in FIG. 5A, or a plurality of spectrometers 41 having a small size may be used as shown in FIG. 5B.
    [37] The present invention described above can also be used in a stepper, a scanner, an exposure apparatus of ASML Corporation, and an exposure apparatus of Canon / Nikon Corporation, which advance the exposure process by the incidence illumination.
    [38] In the exposure apparatus of the semiconductor element of the present invention, a spectroscope for dispersing light as an aperture is used in the incidence illumination, so that the amount of light transmitted is larger than that in the prior art in which the blade is used as the aperture, thereby reducing the power loss generated in the exposure process. This prevents an increase in throughput.
    权利要求:
    Claims (3)
    [1" claim-type="Currently amended] In the exposure apparatus of the semiconductor element using the injecting aperture aperture,
    And at least one spectrometer selected from the group consisting of a prism, a Fresnel lens, and a hologram is used as the aperture.
    [2" claim-type="Currently amended] The method of claim 1,
    And the angle of the prism, the curvature of the Fresnel lens, and the diffraction input of the hologram are determined according to a desired direction in the incident illumination.
    [3" claim-type="Currently amended] The method of claim 1,
    The spectroscope is an exposure apparatus of a semiconductor element, characterized in that the aperture shape is formed by using one or a plurality of small ones thereof.
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    同族专利:
    公开号 | 公开日
    KR100487921B1|2005-05-06|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    2002-10-08|Application filed by 주식회사 하이닉스반도체
    2002-10-08|Priority to KR10-2002-0061247A
    2004-04-14|Publication of KR20040031952A
    2005-05-06|Application granted
    2005-05-06|Publication of KR100487921B1
    优先权:
    申请号 | 申请日 | 专利标题
    KR10-2002-0061247A|KR100487921B1|2002-10-08|2002-10-08|Apparatus for exposing of semiconductor device|
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